CTLDM7120-M621H_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM7120-M621H
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7120-M621H is
an Enhancement-mode N-Channel Field Effect Transistor,
manufactured by the N-Channel DMOS Process, designed
for high speed pulsed amplifier and driver applications.
This MOSFET offers Low r_DS(ON) and Low Threshold
Voltage.
MARKING CODE: CNH
TLM621H CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• ESD protection up to 2kV
• Low rDS(ON) (0.25Ω MAX @ VGS=1.5V)
• High current (ID=1.0A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
20
8.0
1.0
4.0
1.6
-65 to +150
75
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=10V, ID=1.0mA
0.5
VSD
VGS=0, IS=1.0A
rDS(ON)
VGS=4.5V, ID=0.5A
0.075
rDS(ON)
VGS=2.5V, ID=0.5A
0.10
rDS(ON)
VGS=1.5V, ID=0.1A
0.17
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
2.4
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
0.25
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
0.65
gFS
VDS=10V, ID=0.5A
4.2
Crss
VDS=10V, VGS=0, f=1.0MHz
45
Ciss
VDS=10V, VGS=0, f=1.0MHz
220
Coss
VDS=10V, VGS=0, f=1.0MHz
120
ton
VDD=10V, VGS=5.0V, ID=0.5A
25
toff
VDD=10V, VGS=5.0V, ID=0.5A
140
Notes: (1) Mounted on a 4-layer JEDEC test board with one thermal vias connecting the
exposed thermal pad to the first buried plane. PCB was constructed as per
JEDEC standards JESD51-5 and JESD51-7.
MAX
10
10
1.2
1.1
0.10
0.14
0.25
UNITS
V
V
A
A
W
°C
°C/W
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
R3 (2-August 2011)