CTLDM7120-M563 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM7120-M563
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TLM563 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load Power Switches
• DC/DC Converters
• Battery powered devices including Cell Phones,
PDAs, Digital Cameras, MP3 Players, etc.
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7120-M563
is a high quality, enhancement-mode N-channel
MOSFET packaged in a space saving 1.6 x 1.6mm
TLM™ surface mount package. This device is a TLM™
equivalent of the popular CMLDM7120G, SOT-563
device, featuring enhanced thermal characteristics, a
package footprint compatible with standard SOT-563
mounting pad geometries, and a height profile of only
0.4mm.
MARKING CODE: CKN
FEATURES:
• ESD protection up to 2kV
• High Current (ID=1.0A)
• Low rDS(ON) (0.14Ω MAX @ VGS=2.5V, ID=0.5A)
• Logic level compatibility
• High Thermal Efficiency
• TLM563 with a package profile of 0.4mm, compatible with
SOT-563 mounting geometries
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
20
8.0
1.0
4.0
500
-65 to +150
250
UNITS
V
V
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=10V, ID=1.0mA
0.5
VSD
VGS=0, IS=1.0A
rDS(ON)
VGS=4.5V, ID=500mA
0.075
rDS(ON)
VGS=2.5V, ID=500mA
0.10
rDS(ON)
VGS=1.5V, ID=100mA
0.20
gFS
VDS=10V, ID=500mA
2.5
Crss
VDS=10V, VGS=0, f=1.0MHz
45
Ciss
VDS=10V, VGS=0, f=1.0MHz
220
Coss
VDS=10V, VGS=0, f=1.0MHz
120
ton
VDD=10V, VGS=5.0V, ID=500mA
25
toff
VDD=10V, VGS=5.0V, ID=500mA
140
Notes: (1) Mounted on 2 inch square FR4 PCB with copper mounting pad area of 2.4mm².
MAX
10
UNITS
μA
10
μA
V
1.2
V
1.1
V
0.10
Ω
0.14
Ω
0.25
Ω
S
pF
pF
pF
ns
ns
R2 (17-February 2010)