CTLDM7003T-M563D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

CTLDM7003T-M563D
SURFACE MOUNT
DUAL, N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7003T-
M563D is a Dual N-channel MOSFET packaged in
a space saving 1.6 x 1.6mm TLM™ surface mount
package. This device is a TLM™ equivalent of the
popular CMLDM7003T, SOT-563 device, featuring
enhanced thermal characteristics, a package footprint
compatible with standard SOT-563 mounting pad
geometries, and a height profile of only 0.4mm.
TLM563D CASE
MARKING CODE: CJA
• Device is Halogen Free by design
APPLICATIONS:
• Load Power Switches
• DC/DC Converters
• Battery powered devices including Cell Phones,
PDAs, Digital Cameras, MP3 Players, etc.
FEATURES:
• ESD protection up to 2kV
• Dual MOSFETs
• Low rDS(ON) (1.6Ω TYP @ VGS=1.8V)
• TLM563D with a package profile of 0.4mm, compatible with
SOT-563 mounting geometries
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
50
50
12
280
1.5
350
-65 to +150
357
UNITS
V
V
V
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF, IGSSR VGS=5.0V, VDS=0
50
nA
IGSSF, IGSSR VGS=10V, VDS=0
0.5
μA
IGSSF, IGSSR VGS=12V, VDS=0
1.0
μA
IDSS
VDS=50V, VGS=0
50
nA
BVDSS
VGS=0, ID=10μA
50
V
VGS(th)
VDS=10V, ID=250μA
0.75
1.2
V
VSD
VGS=0, IS=115mA
1.4
V
rDS(ON)
VGS=1.8V, ID=50mA
1.6
2.3
Ω
rDS(ON)
VGS=2.5V, ID=50mA
1.3
1.9
Ω
rDS(ON)
VGS=5.0V, ID=50mA
1.1
1.5
Ω
gFS
VDS=10V, ID=200mA
200
mS
Crss
VDS=25V, VGS=0, f=1.0MHz
5.0
pF
Ciss
VDS=25V, VGS=0, f=1.0MHz
50
pF
Coss
VDS=25V, VGS=0, f=1.0MHz
25
pF
Notes: (1) Mounted on 2 inch square FR4 PCB with copper mounting pad area of 1.8mm².
R1 (17-February 2010)