CTLDM7003-M621 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM7003-M621
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7003-M621
is a Silicon N-Channel Enhancement-mode MOSFET in
a small, thermally efficient, TLM™ 2x1mm package.
MARKING CODE: CS
TLM621 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• ESD Protection up to 2kV
• Low rDS(ON)
• Low Threshold Voltage
• Fast Switching
• Logic Level Compatible
• Small TLM^TM 2x1mm Package
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
50
50
12
280
1.5
0.9
-65 to +150
139
UNITS
V
V
V
mA
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=5.0V
IGSSF, IGSSR VGS=10V
IGSSF, IGSSR VGS=12V
IDSS
VDS=50V, VGS=0
BVDSS
VGS=0, ID=10μA
50
VGS(th)
VDS=VGS, ID=250μA
0.49
VSD
VGS=0, IS=115mA
rDS(ON)
VGS=1.8V, ID=50mA
1.6
rDS(ON)
VGS=2.5V, ID=50mA
1.3
rDS(ON)
VGS=5.0V, ID=50mA
1.1
gFS
VDS=10V, ID=200mA
200
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm².
MAX
100
2.0
2.0
50
1.0
1.4
3.0
2.5
2.0
5.0
50
25
UNITS
nA
μA
μA
nA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
R1 (17-February 2010)