CTLDM7002A-M621 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM7002A-M621
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLDM7002A-M621 is a Silicon N-Channel
Enhancement-mode MOSFET in a small, thermally
efficient, TLM™ 2x1mm package.
MARKING CODE: CP
TLM621 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
FEATURES:
• Low rDS(ON)
• Low VDS(ON)
• Low Threshold Voltage
• Fast Switching
• Logic Level Compatible
• Small TLM™ 2x1mm Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ_JA
60
60
40
280
280
1.5
1.5
0.9
-65 to +150
139
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=60V, VGS=0
IDSS
VDS=60V, VGS=0, TJ=125°C
ID(ON)
VGS=10V, VDS=10V
500
BVDSS
VGS=0, ID=10μA
60
VGS(th)
VDS=VGS, ID=250μA
1.0
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=400mA
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm².
MAX
100
1.0
500
2.5
1.0
0.15
1.2
UNITS
V
V
V
mA
mA
A
A
W
°C
°C/W
UNITS
nA
μA
μA
mA
V
V
V
V
V
R2 (17-February 2010)