CTLDM3590_CTLDM7590 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – MOSFETs in the TLM3D6D8 package

Product Brief
CTLDM3590 ^{(20V, 160mA N-Channel)}
CTLDM7590 ^{(20V, 140mA P-Channel)}
MOSFETs in the TLM3D6D8 package
Central Semiconductor’s CTLDM3590 (N-Channel) and CTLDM7590
(P-Channel) are enhancement-mode MOSFETs designed for
applications including high speed pulsed amplifiers and drivers.
These MOSFETs have beneficially low rDS(ON), low threshold
voltage, and very low gate charge characteristics.
Features:
• ESD protection up to 2kV
• Low rDS(ON)
• Low threshold voltage
• Low gate charge
Applications:
• Load/Power switches
• Boost/Buck converters
• Battery charging/Power management
Benefits:
• Low profile
• Space saving
• Energy efficiency
TLM3D6D8
package
Top View
Bottom View
Typical Electrical Characteristics
Samples:
Literature:
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Type No.
CTLDM3590
(N-Channel)
CTLDM7590
(P-Channel)
Maximum Ratings (TA = 25˚C unless otherwise noted)
VDS
(V)
ID
(mA)
PD
(mW)
TJ, Tstg
(˚C)
Θ_JA
(˚C/W)
MAX
MAX
MAX
MAX
MAX
BVDSS
(V)
MIN
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
rDS(ON)
(Ω) (Ω)
@ VGS @ ID
(V) (mA)
Qgs
(nC)
Ciss
(pF)
MIN MAX TYP MAX
TYP
TYP
1.5
3.0
4.5
100
20
160
125 -65 to +150 1000
20
0.4 1.0
2.0
3.0
4.0
2.5
6.0
1.8
50
20
0.176
9.0
4.0
10
1.5
10
4.0
5.0
4.5
100
20
140
125 -65 to +150 1000
20
0.4 1.0
5.5
8.0
7.0
10
2.5
1.8
50
20
0.17
10
11
17
1.5
10
Crss
(pF)
TYP
2.2
4.0
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