CTLDM3590 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM3590
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM3590 is
an enhancement-mode N-channel MOSFET designed
for applications including high speed pulsed amplifiers
and drivers. This MOSFET has beneficially low
rDS(ON), low threshold voltage, and very low gate
charge characteristics.
MARKING CODE: 1
TLM3D6D8 CASE
APPLICATIONS:
• Load/Power Switches
• Boost/Buck Converters
• Battery Charging/Power Management
FEATURES:
• ESD protection up to 2kV
• Power dissipation: 125mW
• Low rDS(ON)
• Low threshold voltage
• Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm
TLM^TM leadless surface mount package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ_JA
20
8.0
160
800
125
-65 to +150
1000
UNITS
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=5.0V, VDS=0
IDSS
VDS=5.0V, VGS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=VGS, ID=250μA
0.4
rDS(ON)
VGS=4.5V, ID=100mA
1.5
rDS(ON)
VGS=2.5V, ID=50mA
2.0
rDS(ON)
VGS=1.8V, ID=20mA
3.0
rDS(ON)
VGS=1.5V, ID=10mA
4.0
rDS(ON)
VGS=1.2V, ID=1.0mA
7.0
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
0.458
Qgs
VDS=10V, VGS=4.5V, ID=100mA
0.176
Qgd
VDS=10V, VGS=4.5V, ID=100mA
0.138
gFS
VDS=5.0V, ID=125mA
1.3
Crss
VDS=15V, VGS=0, f=1.0MHz
2.2
Ciss
VDS=15V, VGS=0, f=1.0MHz
9.0
Coss
VDS=15V, VGS=0, f=1.0MHz
3.0
ton
VDD=10V, VGS=4.5V, ID=200mA
25
toff
VDD=10V, VGS=4.5V, ID=200mA
85
MAX
100
50
100
1.0
3.0
4.0
6.0
10
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
R3 (27-September 2012)