CTLDM303N-M832DS Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM303N-M832DS
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS
is a dual enhancement-mode N-Channel silicon MOSFET
designed for high speed pulsed amplifier and driver
applications. This energy efficient MOSFET offers
beneficially low rDS(ON), low gate charge, and low
threshold voltage.
TLM832DS CASE
MARKING CODE: C330
APPLICATIONS:
• DC-DC converters
• Drive circuits
• Power management
FEATURES:
• Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
• High current (ID=3.6A)
• Low gate charge
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
30
12
3.6
14.4
1.65
-55 to +150
76
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I_GSSF, IGSSR VGS=12V, VDS=0
10
μA
IDSS
VDS=20V, VGS=0
1.0
μA
BVDSS
VGS=0, ID=250μA
30
V
VGS(th)
VGS=VDS, ID=250μA
0.6
1.2
V
rDS(ON)
VGS=4.5V, ID=1.8A
0.033
0.04
Ω
rDS(ON)
VGS=2.5V, ID=1.8A
0.042
0.078
Ω
Qg(tot)
VDD=10V, VGS=4.5V, ID=3.6A
5.0
13
nC
Qgs
VDD=10V, VGS=4.5V, ID=3.6A
0.9
1.4
nC
Qgd
VDD=10V, VGS=4.5V, ID=3.6A
1.0
2.7
nC
gFS
VDS=5.0V, ID=3.6A
11.8
S
Crss
VDS=10V, VGS=0, f=1.0MHz
55
pF
Ciss
VDS=10V, VGS=0, f=1.0MHz
590
pF
Coss
VDS=10V, VGS=0, f=1.0MHz
50
pF
ton
VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω
15
ns
toff
VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω
29
ns
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm²
R2 (8-October 2012)