CT-32 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – DIAC DO-35 CASE

DATA SHEET
CT-32
DIAC
DO-35 CASE
DESCRIPTION
The Central Semiconductor CT-32 Diac functions as a trigger diode with a fixed voltage reference and low
breakover current. This device is manufactured in a hermetically sealed glass package to ensure high reliability.
MAXIMUM RATINGS (TA=25°C)
Repetitive Peak On-state Current
tp=20µs, f=120Hz
Operating and Storage
Junction Temperature
SYMBOL
ITRM
TJ,Tstg
2.0
-40 to +125
UNITS
A
°C
ELECTRICAL CHARACTERISTICS (TA=25°C)
SYMBOL
VBO*
| VBO1 – VBO2 |
∆V
VO
IBO
IR
IP
tr
TEST CONDITIONS
C=22nF**
C=22nF**
VBO _& VF @ 10mA
See Figure 2
C=22nF**
VR = 18V
See Figure 2
See Figure 3
* Both directions.
**Capacitor connected in parallel with device.
MIN
MAX
UNITS
28
36
V
3.0
V
5.0
V
5.0
V
50
µA
10
µA
0.3
A
2.0
µs
(SEE REVERSE SIDE)
R0