CSICD10-650 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – Positive temperature coefficient

CSICD10-650
SURFACE MOUNT
SILICON CARBIDE
SCHOTTKY RECTIFIER
10 AMP, 650 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSICD10-650 is a
silicon carbide Schottky rectifier designed for high
frequency systems where energy efficiency and thermal
performance are critical design elements.
MARKING: FULL PART NUMBER
DPAK CASE
FEATURES:
• Positive temperature coefficient
• High reverse voltage
• High operating temperature (175°C MAX)
• Stable switching over temperature extremes
APPLICATIONS:
• Power inverters
• Industrial motor drives
• Switch-mode power supplies
• Power factor correction
• Over-current protection
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Peak Reverse Surge Voltage
VRSM
DC Blocking Voltage
VR
Continuous Forward Current (TC=135°C)
IF
Peak Forward Surge Current, tp=8.3ms
IFSM
Power Dissipation
PD
Power Dissipation (TC=135°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
_JC
650
650
650
10
60
93
25
-55 to +175
1.6
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IR
VR=650V
70
IR
VR=650V, TJ=175°C
150
BVR
IR=500μA
650
VF
IF=10A
1.5
VF
IF=10A, TJ=175°C
2.1
QC
VR=400V, IF=10A, di/dt=250A/μs
16
CJ
VR=1.0V, f=1.0MHz
295
CJ
VR=300V, f=1.0MHz
31
CJ
VR=600V, f=1.0MHz
28
MAX
125
500
1.7
2.5
325
UNITS
V
V
V
A
A
W
W
°C
°C/W
UNIT
μA
μA
V
V
V
nC
pF
pF
pF
R1 (24-November 2014)