CSICD05-1200 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – Stable switching over temperature extremes

CSICD05-1200
SURFACE MOUNT
SILICON CARBIDE
SCHOTTKY RECTIFIER
5.0 AMP, 1200 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSICD05-1200
is a silicon carbide Schottky rectifier designed for high
frequency systems where energy efficiency and thermal
performance are critical design elements.
MARKING CODE: SICD0512
DPAK-2L Case
APPLICATIONS:
• Power inverters
• Motor drives
• Switch-mode power supplies
• Power factor correction
FEATURES:
• Low profile package
• Low switching loss
• Stable switching over temperature extremes
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Peak Reverse Surge Voltage
VRSM
DC Blocking Voltage
VR
Average Rectified Forward Current (TC=142°C)
IO
Continuous Forward Current (TC=142°C)
IF
Peak Forward Surge Current, tp=8.3ms
IFSM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Power Dissipation (TC=142°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Note 1: L=10mH, IPK=2.9A, VDD=100V, Initial TJ=25°C
Θ_JC
1200
1200
1200
5.0
5.0
40
44
150
42
-55 to +175
1.6
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
IR
VR=1200V
30
IR
VR=1200V, TJ=175°C
45
VF
IF=5.0A
1.5
VF
IF=5.0A, TJ=175°C
2.3
QC
VR=600V, IF=5.0A, di/dt=250A/μs
14
CJ
VR=1.0V, f=1.0MHz
240
CJ
VR=300V, f=1.0MHz
26
CJ
VR=600V, f=1.0MHz
19
MAX
190
600
1.7
3.0
UNITS
V
V
V
A
A
A
mJ
W
W
°C
°C/W
UNIT
μA
μA
V
V
nC
pF
pF
pF
R1 (7-March 2017)