CSIC10-1200 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON CARBIDE SCHOTTKY RECTIFIER 10 AMP, 1200 VOLT

CSIC10-1200
SILICON CARBIDE
SCHOTTKY RECTIFIER
10 AMP, 1200 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSIC10-1200 is a
silicon carbide Schottky rectifier designed for high
frequency systems where energy efficiency and thermal
performance are critical design elements.
MARKING: FULL PART NUMBER
TO-220-2 CASE
FEATURES:
• Positive temperature coefficient
• High reverse voltage
• High operating temperaure (175°C MAX)
• Stable switching over temperature extremes
APPLICATIONS:
• Power inverters
• Industrial motor drives
• Switch-mode power supplies
• Power factor correction
• Over-current protection
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Peak Reverse Surge Voltage
VRSM
DC Blocking Voltage
VR
Average Rectified Forward Current (TC=130°C)
IO
Continuous Forward Current (TC=130°C)
IF
Peak Forward Surge Current, tp=8.3ms
IFSM
Power Dissipation
PD
Power Dissipation (TC=130°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JC
1200
1200
1200
10
14
50
150
42
-55 to +175
1.0
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
IR
VR=1200V
60
IR
VR=1200V, TJ=175°C
0.09
VF
IF=10A
1.55
VF
IF=10A, TJ=175°C
2.3
QC
VR=800V, IF=10A, di/dt=750A/μs
54
CJ
VR=1.0V, f=1.0MHz
477
CJ
VR=300V, f=1.0MHz
50
CJ
VR=600V, f=1.0MHz
41
MAX
400
1.0
1.8
3.0
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
UNIT
μA
mA
V
V
nC
pF
pF
pF
R2 (4-February 2013)