CSDD-16B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON CONTROLLED RECTIFIER

CSDD-16M
CSDD-16N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
16 AMP, 600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSDD-16M series
type is an Epoxy Molded Silicon Controlled Rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
D²PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge, t=10ms
I²t Value for Fusing, t=10ms
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
I²t
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current
PGM
PG(AV)
IFGM
VFGM
VRGM
di/dt
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
TJ
Tstg
Θ_JA
Θ_JC
CSDD-16M CSDD-16N
600
800
16
160
128
40
1.0
4.0
16
5.0
100
-40 to +125
-40 to +150
60
2.0
UNITS
V
A
A
A²s
W
W
A
V
V
A/μs
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10Ω
IT=100mA
VD=12V, RL=10Ω
ITM=32A, tp=380μs
VD=²/₃ VDRM, TC=125°C
10
μA
2.0
mA
3.4
15
mA
8.8
20
mA
0.64
1.50
V
1.40
1.60
V
500
V/μs
R1 (17-February 2010)