CSDD-12M_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON CONTROLLED RECTIFIER 12 AMP, 600 THRU 800 VOLTS

CSDD-12M
CSDD-12N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
12 AMP, 600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSDD-12M series
type is an Epoxy Molded Silicon Controlled Rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
D²PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=90°C)
IT(RMS)
Peak One Cycle Surge, t=10ms
ITSM
I²t Value for Fusing, t=10ms
I²t
CSDD-12M CSDD-12N
600
800
12
110
60
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current
PGM
40
PG(AV)
1.0
IFGM
4.0
VFGM
16
VRGM
5.0
di/dt
100
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
TJ
Tstg
Θ_JA
Θ_JC
-40 to +125
-40 to +150
60
2.5
UNITS
V
A
A
A²s
W
W
A
V
V
A/μs
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10Ω
IT=100mA
VD=12V, RL=10Ω
ITM=24A, tp=380μs
VD=²/₃ VDRM, TC=125°C
10
μA
3.0
mA
3.5
15
mA
8.7
20
mA
0.64
1.50
V
1.21
1.60
V
200
V/μs
R2 (17-February 2010)