CSDD-12M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 12 AMP, 600 THRU 800 VOLTS

CSDD-12M
CSDD-12N
SILICON CONTROLLED RECTIFIER
12 AMP, 600 THRU 800 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSDD-12M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
D²PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=10ms)
I²t Value for Fusing (t=10ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Forward Gate Current (tp=10µs)
Peak Forward Gate Voltage (tp=10µs)
Peak Reverse Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM, VRRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IFGM
VFGM
VRGM
di/dt
Tstg
TJ
Θ_JA
Θ_JC
CSDD CSDD
-12M -12N
600
800
12
110
60
40
1.0
4.0
16
5.0
100
-40 to +150
-40 to +125
60
2.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10Ω
IT=100mA
VD=12V, RL=10Ω
ITM=24A, tp=380µs
VD=²/₃ VDRM, TC=125°C
3.5
8.7
0.64
1.21
200
MAX
10
3.0
15
20
1.50
1.60
UNITS
V
A
A
A²s
W
W
A
V
V
A/µs
°C
°C
°C/W
°C/W
UNITS
µA
mA
mA
mA
V
V
V/µs
R1 (24-September 2004)