CSD-8M_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS

CSD-8M
CSD-8N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
8 AMP, 600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSD-8M series
type is an Epoxy Molded Silicon Controlled Rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge, t=10ms
I²t Value for Fusing, t=10ms
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IFGM
VFGM
VRGM
di/dt
TJ
Tstg
CSD-8M CSD-8N
600
800
8.0
80
32
40
1.0
4.0
16
5.0
50
-40 to +125
-40 to +150
UNITS
V
A
A
A²s
W
W
A
V
V
A/μs
°C
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10Ω
IT=100mA
VD=12V, RL=10Ω
ITM=16A, tp=380μs
VD=²/₃ VDRM, TC=125°C
10
μA
2.0
mA
3.0
15
mA
7.3
20
mA
0.9
1.5
V
1.3
1.8
V
200
V/μs
R1 (17-February 2010)