CSD-8M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 8.0 AMP SCR 600 THRU 800 VOLTS

CSD-8M
CSD-8N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIERS
8.0 AMP, 600 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSD-8M and
CSD-8N are epoxy molded SCRs designed for sensing
circuit and control system applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=90°C)
IT(RMS)
Peak One Cycle Surge, t=10ms
ITSM
I²t Value for Fusing, t=10ms
I²t
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current
PGM
PG _(AV)
IFGM
VFGM
VRGM
di/dt
Operating Junction Temperature
TJ
Storage Temperature
Tstg
CSD-8M
600
CSD-8N
800
8.0
80
32
40
1.0
4.0
16
5.0
50
-40 to +125
-40 to +150
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IDRM, IRRM Rated VDRM, VRRM
IDRM, IRRM Rated VDRM, VRRM, TC=125°C
IGT
VD=12V, RL=10Ω
3.0
IH
IT=100mA
7.3
VGT
VD=12V, RL=10Ω
0.9
VTM
ITM=16A, tp=380μs
1.3
dv/dt
VD=²/₃ VDRM, TC=125°C
200
MAX
10
2.0
15
20
1.5
1.8
UNITS
V
A
A
A²s
W
W
A
V
V
A/μs
°C
°C
UNITS
μA
mA
mA
mA
V
V
V/μs
R2 (21-January 2013)