CSD-4M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 4.0 AMP SCR 600 THRU 800 VOLTS

CSD-4M
CSD-4N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIERS
4.0 AMP, 600 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSD-4M and
CSD-4N are epoxy molded SCRs designed for sensing
circuit and control system applications.
DPAK CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CSD-4M
CSD-4N
Peak Repetitive Off-State Voltage
VDRM, VRRM 600
800
RMS On-State Current (TC=85°C)
IT(RMS)
4.0
Peak One Cycle Surge Current, t=10ms
ITSM
30
I²t Value for Fusing, t=10ms
I²t
4.5
Peak Gate Power, tp=20μs
PGM
3.0
Average Gate Power Dissipation
PG _(AV)
0.2
Peak Gate Current, tp=20μs
IGM
1.2
Critical Rate of Rise of On-State Current
di/dt
50
Operating Junction Temperature
Storage Temperature
TJ
-40 to +125
Tstg
-40 to +150
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IDRM, IRRM Rated VDRM, VRRM, RGK=1KΩ
IDRM, IRRM Rated VDRM, VRRM, RGK=1KΩ, TC=125°C
IGT
VD=12V, RL=10Ω
20
38
IH
IT=50mA, RGK=1KΩ
0.25
VGT
VD=12V, RL=10
0.55
VTM
ITM=8.0A, tp=380μs
1.6
dv/dt
VD=²/₃ VDRM, RGK=1KΩ, TC=125°C
10
MAX
10
200
200
2.0
0.8
1.8
UNITS
V
A
A
A²s
W
W
A
A/μs
°C
°C
UNITS
μA
μA
μA
mA
V
V
V/μs
R2 (21-January 2013)