CS65-70B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS

CS65-70B
CS65-70D
CS65-70M
CS65-70N
CS65-70P
CS65-70PB
DATA SHEET
SILICON CONTROLLED RECTIFIER
70 AMPS RMS, 200 THRU 1200 VOLTS
TO-65 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS65-70B series types are High Power Silicon Controlled Rectifiers designed for
phase control applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
CS65 CS65 CS65 CS65 CS65 CS65
-70B -70D -70M -70N -70P -70PB UNITS
Peak Repetitive Off-State Voltage
Peak Non-Repetitive Reverse Voltage
RMS On-State Current (TC=102°C)
Average On-State Current (TC=102°C)
Peak One Cycle Surge ( 60Hz)
I²t Value for Fusing (t=8.3ms)
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Gate Power
Average Gate Power (tp=10µs)
Peak Gate Current
Critical Rate of Rise of On-State Current
Storage Temperature
Junction Temperature
Thermal Resistance
VDRM, VRRM 200 400 600 800 1000 1200 V
VRSM
IT(RMS)
IT(AV)
ITSM
300 500 700 900 1100 1300 V
63
A
40
A
1000
A
I²t
VFGM
VRGM
4100
A²s
20
V
10
V
PGM
PG(AV)
IGM
10
W
1.0
W
3.0
A
di/dt
200
A/µs
Tstg
-65 to +150
°C
TJ
-65 to +125
°C
Θ_J-C
0.35
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNITS
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=33Ω
IT=500mA
VD=12V, RL=33Ω
ITM=500A
VD=.67 x VDRM, TC=125°C
6.0
mA
100
mA
200
mA
3.0
V
3.0
V
200
V/µs
(SEE REVERSE SIDE)
R2