CS55BZ Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS

DATA SHEET
CS55BZ
CS55DZ
SILICON CONTROLLED RECTIFIER
0.8 AMPS, 200 AND 400 VOLTS
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS55BZ series type are epoxy molded silicon controlled rectifiers designed
for applications requiring extremely low gate sensitivity.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
CS55BZ
CS55DZ
UNITS
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=60oC)
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM,VRRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
VGM
Tstg
TJ
Θ_JA
Θ_JC
200
400
0.8
10
0.24
2.0
0.1
1.0
8.0
-40 to +125
-40 to +125
200
100
V
A
A
A2s
W
W
A
V
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNITS
IDRM,IRRM
IDRM,IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM,VRRM, RGK=1KΩ
Rated VDRM,VRRM, RGK=1KΩ, TC=125°C
VD=12V
RGK=1KΩ
VD=12V
ITM=1.0A
VD=.67 x VDRM, RGK=1KΩ, TC=125°C
1.00
µA
100
µA
20
µA
5.00
mA
0.8
V
1.70
V
25
V/µs
(SEE REVERSE SIDE)
R1