CS39-4B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 4.0 AMP, 200 THRU 800 VOLTS

CS39-4B
CS39-4D
CS39-4M
CS39-4N
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS39-4B series
types are hermetically sealed silicon controlled
rectifiers designed for sensing circuit applications and
control systems.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
CS39
SYMBOL -4B
Peak Repetitive Off-State Voltage
VDRM, VRRM 200
RMS On-State Current (TC=90°C)
IT(RMS)
Peak One Cycle Surge Current (t=10ms)
ITSM
I²t Value for Fusing (t=10ms)
I²t
Peak Gate Power Dissipation (tp=10μs)
Average Gate Power Dissipation
Peak Gate Current (tp=10μs)
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
PGM
PG(AV)
IGM
TJ
Tstg
Θ_JA
Θ_JC
CS39
-4D
400
CS39
-4M
600
4.0
35
4.5
3.0
0.2
1.2
-40 to +125
-65 to +150
180
10
CS39
-4N
800
UNITS
V
A
A
A²s
W
W
A
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
IGT
VD=12V, RL=10Ω
38
IH
IT=50mA, RGK=1.0KΩ
0.25
VGT
VD=12V, RL=10Ω
0.55
VGD
VD=300V, RGK=1.0KΩ, TC=125°C
0.2
VTM
IT=8.0A, tp=380μs
1.6
dv/dt
VD=⅔VDRM, RGK=1.0KΩ, TC=125°C
10
MAX
5.0
200
200
5.0
0.8
1.95
UNITS
μA
μA
μA
mA
V
V
V
V/μs
R3 (19-September 2012)