CS223-4M_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS

CS223-4M
CS223-4N
SURFACE MOUNT
4 AMP SILICON SCR
600 THRU 800 VOLTS
SOT-223 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS223-4M series
type is an Epoxy Molded Silicon Controlled Rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=85°C)
Peak One Cycle Surge, t=10ms
I²t Value for Fusing, t=10ms
Peak Gate Power, tp=20μs
Average Gate Power Dissipation
Peak Gate Current, tp=20μs
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IGM
di/dt
TJ
Tstg
Θ_JA
CS223-4M CS223-4N
600
800
4.0
30
4.5
3.0
0.2
1.2
50
-40 to +125
-40 to +150
62.5
UNITS
V
A
A
A²s
W
W
A
A/μs
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM Rated VDRM, VRRM, RGK=1KΩ
IDRM, IRRM Rated VDRM, VRRM, RGK=1KΩ, TC=125°C
IGT
VD=12V, RL=10Ω
20
IH
IT=50mA, RGK=1KΩ
VGT
VD=12V, RL=10Ω
VTM
ITM=8.0A, tp=380μs
dv/dt
VD=²/₃ VDRM, RGK=1KΩ, TC=125°C
10
10
μA
200
μA
38
200
μA
0.25
2.0
mA
0.55
0.8
V
1.6
1.8
V
V/μs
R1 (12-February 2010)