CS223-4M Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON CONTROLLED RECTIFIERS

CS223-4M
CS223-4N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIERS
4.0 AMP, 600 AND 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS223-4M and
CS223-4N are epoxy molded SCRs designed for
sensing circuit applications and control systems.
SOT-223 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=85°C)
Peak One Cycle Surge, t=10ms
I²t Value for Fusing, t=10ms
Peak Gate Power, tp=20μs
Average Gate Power Dissipation
Peak Gate Current, tp=20μs
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IGM
di/dt
TJ
Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM, IRRM
Rated VDRM, VRRM, RGK=1.0KΩ
IDRM, IRRM
Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
IGT
VD=12V, RL=10Ω
20
IH
IT=50mA, RGK=1.0KΩ
VGT
VD=12V, RL=10Ω
VTM
ITM=8.0A, tp=380μs
dv/dt
VD=²/₃ VDRM, RGK=1.0KΩ, TC=125°C
10
CS223-4M CS223-4N
600
800
4.0
30
4.5
3.0
0.2
1.2
50
-50 to +125
-50 to +150
62.5
UNITS
V
A
A
A²s
W
W
A
A/μs
°C
°C
°C/W
TYP
MAX
UNITS
10
μA
100
μA
38
200
μA
1.0
2.0
mA
0.55
0.8
V
2.0
2.2
V
V/μs
R3 (1-June 2015)