CS220-8B Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS

CS220-8B
CS220-8D
CS220-8M
CS220-8N
SILICON CONTROLLED RECTIFIERS
8.0 AMP, 200 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS220-8B series
types are epoxy molded SCRs designed for sensing
circuit and control system applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CS220
-8B
-8D
-8M
-8N
Peak Repetitive Off-State Voltage
VDRM, VRRM 200
400
600
800
RMS On-State Current (TC=90°C)
IT(RMS)
8.0
Peak One Cycle Surge Current, t=10ms
ITSM
60
I²t Value for Fusing, t=10ms
I²t
18
Peak Gate Power Dissipation, tp=10μs
PGM
40
Average Gate Power Dissipation
PG(AV)
1.0
Peak Forward Gate Current, tp=10μs
IFGM
4.0
Peak Forward Gate Voltage, tp=10μs
VFGM
16
Peak Reverse Gate Voltage, tp=10μs
VRGM
5.0
Critical Rate of Rise of On-State Current
di/dt
50
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
-40 to +125
-40 to +150
60
2.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IDRM, IRRM Rated VDRM, VRRM
IDRM, IRRM Rated VDRM, VRRM, TC=125°C
IGT
VD=12V, RL=10Ω
3.0
IH
IT=100mA
7.3
VGT
VD=12V, RL=10Ω
0.9
VTM
ITM=16A, tp=380μs
1.3
dv/dt
VD=⅔Rated VDRM, TC=125°C
200
MAX
10
2.0
15
20
1.5
1.8
UNITS
V
A
A
A²s
W
W
A
V
V
A/μs
°C
°C
°C/W
°C/W
UNITS
μA
mA
mA
mA
V
V
V/μs
R4 (24-October 2013)