CS220-10B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 10 AMP, 200 THRU 800 VOLTS

CS220-10B
CS220-10D
CS220-10M
CS220-10N
SILICON CONTROLLED RECTIFIERS
10 AMP, 200 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS220-10B series
types are epoxy molded SCRs designed for sensing
circuit and control system applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=90°C)
IT(RMS)
Peak One Cycle Surge Current, t=10ms
ITSM
I²t Value for Fusing, t=10ms
I²t
Peak Gate Power Dissipation, tp=10μs
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current
PGM
PG(AV)
IFGM
VFGM
VRGM
di/dt
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
-10B
200
CS220
-10D -10M
400
600
10
100
50
40
1.0
4.0
16
5.0
50
-40 to +125
-40 to +150
60
2.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IDRM, IRRM Rated VDRM, VRRM
IDRM, IRRM Rated VDRM, VRRM, TC=125°C
IGT
VD=12V, RL=33Ω
IH
IT=100mA
VGT
VD=12V, RL=33Ω
VTM
ITM=20A, tp=10ms
dv/dt
VD=⅔Rated VDRM, TC=125°C
200
MAX
10
2.0
15
30
1.5
1.6
-10N
800
UNITS
V
A
A
A²s
W
W
A
V
V
A/μs
°C
°C
°C/W
°C/W
UNITS
μA
mA
mA
mA
V
V
V/μs
R1 (24-October 2013)