CS18BZ Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIERS

CS18BZ
CS18DZ
CS18MZ
CS18NZ
SILICON CONTROLLED RECTIFIERS
1.0 AMP, 200 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS18BZ series
types are hermetically sealed silicon controlled
rectifiers manufactured in a TO-18 case, designed for
control systems and sensing circuit applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
CS18BZ
Peak Repetitive Off-State Voltage
VDRM, VRRM 200
RMS On-State Current (TC=90°C) IT(RMS)
Nonrept. On-State Current
ITSM
Fusing Current (t=10ms)
I²t
Peak Gate Current (t=10μs)
Peak Gate Dissipation (t=10μs)
Gate Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
IGM
PGM
PG(AV)
TJ
Tstg
Θ_JC
Θ_JA
CS18DZ CS18MZ
400
600
1.0
10
0.24
1.0
2.0
0.1
-40 to +125
-40 to +150
32
200
CS18NZ
800
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
1.0
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
0.1
VTM
IT=2.0A
1.6
2.15
IGT
VD=12V, RL=10Ω
20
VGT
VD=12V, RL=10Ω
0.65
0.8
IH
RGK=1.0KΩ
0.5
5.0
dv/dt
VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C
25
UNITS
V
A
A
A²s
A
W
W
°C
°C
°C/W
°C/W
UNITS
μA
mA
V
μA
V
mA
V/μs
R0 (13-February 2013)