CS18B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER

CS18B
CS18D
CS18M
CS18N
SILICON CONTROLLED RECTIFIER
1 AMP, 200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS18B series
types are hermetically sealed silicon controlled
rectifiers manufactured in a TO-18 case, designed for
control systems and sensing circuit applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
CS18B
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Nonrept. On-State Current
Fusing Current (t=10ms)
VDRM, VRRM 200
IT(RMS)
ITSM
I²t
Peak Gate Current (t=10μs)
Peak Gate Dissipation (t=10μs)
Gate Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
IGM
PGM
PG(AV)
TJ
Tstg
Θ_JC
Θ_JA
CS18D CS18M
400
600
1.0
10
0.24
1.0
2.0
0.1
-40 to +125
-40 to +150
32
200
CS18N
800
UNITS
V
A
A
A²s
A
W
W
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
IDRM, IRRM
VTM
IGT
VGT
IH
dv/dt
Rated VDRM, VRRM, RGK=1.0KΩ
Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
IT=2.0A
VD=12V, RL=10Ω
VD=12V, RL=10Ω
RGK=1.0KΩ
VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C
25
1.0
μA
0.1
mA
1.6
2.15
V
20
200
μA
0.65
0.8
V
0.5
5.0
mA
V/μs
R2 (18-January 2010)