CQDD-8M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 8.0 AMP TRIAC 600 THRU 800 VOLTS

CQDD-8M
CQDD-8N
8.0 AMP TRIAC
600 THRU 800 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-8M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
D²PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I²t Value for Fusing (t=8.3ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IGM
VGM
di/dt
Tstg
TJ
Θ_JA
Θ_JC
CQDD CQDD
-8M
-8N
600
800
8.0
50
10
40
1.0
4.0
16
10
-40 to +150
-40 to +125
60
3.2
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=11A, tp=380µs
VD=²/₃ VDRM, RGK=∞, TC=125°C
4.5
17
4.7
0.95
1.35
1.30
5.0
MAX
10
500
20
50
25
1.50
2.50
1.75
UNITS
V
A
A
A²s
W
W
A
V
A/µs
°C
°C
°C/W
°C/W
UNITS
µA
µA
mA
mA
mA
V
V
V
V/µs
R1 (24-September 2004)