CQDD-8B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT 8 AMP SILICON TRIAC

CQDD-8M
CQDD-8N
SURFACE MOUNT
8 AMP SILICON TRIAC
600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-8M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
D²PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge, t=8.3ms
I²t Value for Fusing, t=8.3m
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current Repetitive, f=60Hz
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VDRM
IT(RMS)
ITSM
I²t
PGM
PG(AV)
IGM
VGM
di/dt
TJ
Tstg
Θ_JA
Θ_JC
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
Rated VDRM
IDRM
Rated VDRM, TC=125°C
IGT
VD=12V, RL=10Ω, QUAD I, II, III
IGT
VD=12V, RL=10Ω, QUAD IV
IH
IT=100mA
VGT
VD=12V, RL=10Ω, QUAD I, II, III
VGT
VD=12V, RL=10Ω, QUAD IV
VTM
ITM=11A, tp=380μs
dv/dt
VD=²/₃ VDRM, RGK=∞, TC=125°C
5.0
CQDD-8M CQDD-8N
600
800
8.0
50
10
40
1.0
4.0
16
10
-40 to +125
-40 to +150
60
3.2
UNITS
V
A
A
A²s
W
W
A
V
A/μs
°C
°C
°C/W
°C/W
TYP
MAX
UNITS
10
μA
500
μA
4.5
20
mA
17
50
mA
4.7
25
mA
0.95
1.50
V
1.35
2.50
V
1.30
1.75
V
V/μs
R2 (12-February 2010)