CQDD-25M_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT 25 AMP SILICON TRIAC 600 THRU 800 VOLTS

CQDD-25M
CQDD-25N
SURFACE MOUNT
25 AMP SILICON TRIAC
600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-25M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
D²PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge, t=8.3ms
I²t Value for Fusing, t=8.3ms
SYMBOL
VDRM
IT(RMS)
ITSM
I²t
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current Repetitive, f=60Hz
PGM
PG _(AV)
IGM
VGM
di/dt
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
CQDD-25M CQDD-25N
600
800
25
150
94
40
1.0
10
16
10
-40 to +125
-40 to +150
60
1.7
UNITS
V
A
A
A²s
W
W
A
V
A/μs
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=35A, tp=380μs
VD=²/₃ VDRM, RGK=∞, TC=125°C
10
μA
2.0
mA
11.1
30
mA
28.2
60
mA
18.4
50
mA
1.03
1.50
V
1.74
2.50
V
1.80
V
6.0
V/μs
R2 (12-February 2010)