CQDD-16M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 16 AMP TRIAC 600 THRU 800 VOLTS

CQDD-16M
CQDD-16N
16 AMP TRIAC
600 THRU 800 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-16M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
D²PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I²t Value for Fusing (t=8.3ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IGM
VGM
di/dt
Tstg
TJ
Θ_JA
Θ_JC
CQDD CQDD
-16M -16N
600
800
16
110
50
40
1.0
6.0
16
10
-40 to +150
-40 to +125
60
2.3
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=22.5A, tp=380µs
VD=²/₃ VDRM, RGK=∞, TC=125°C
10.9
55.2
9.8
0.97
1.51
1.35
10
MAX
10
2.0
25
75
25
1.50
2.50
1.60
UNITS
V
A
A
A²s
W
W
A
V
A/µs
°C
°C
°C/W
°C/W
UNITS
µA
mA
mA
mA
mA
V
V
V
V/µs
R1 (24-September 2004)