CQDD-16B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT 16 AMP SILICON TRIAC

CQDD-16M
CQDD-16N
SURFACE MOUNT
16 AMP SILICON TRIAC
600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-16M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
D²PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge, t=8.3ms
I²t Value for Fusing, t=8.3ms
SYMBOL
VDRM
IT(RMS)
ITSM
I²t
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current Repetitive, f=60Hz
PGM
PG(AV)
IGM
VGM
di/dt
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
CQDD-16M CQDD-16N
600
800
16
110
50
40
1.0
6.0
16
10
-40 to +125
-40 to +150
60
2.3
UNITS
V
A
A
A²s
W
W
A
V
A/μs
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=22.5A, tp=380μs
VD=²/₃ VDRM, RGK=∞, TC=125°C
10
10
μA
2.0
mA
10.9
25
mA
55.2
75
mA
9.8
25
mA
0.97
1.50
V
1.51
2.50
V
1.35
1.60
V
V/μs
R2 (12-February 2010)