CQDD-12B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT 12 AMP SILICON TRIAC

CQDD-12M
CQDD-12N
SURFACE MOUNT
12 AMP SILICON TRIAC
600 THRU 800 VOLTS
D²PAK CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-12M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge, t=8.3ms
I²t Value for Fusing, t=8.3ms
SYMBOL
VDRM
IT(RMS)
ITSM
I²t
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current Repetitive, f=60Hz
PGM
PG(AV)
IGM
VGM
di/dt
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
Rated VDRM
IDRM
Rated VDRM, TC=125°C
IGT
VD=12V, RL=10Ω, QUAD I, II, III
IGT
VD=12V, RL=10Ω, QUAD IV
IH
IT=100mA
VGT
VD=12V, RL=10Ω, QUAD I, II, III
VGT
VD=12V, RL=10Ω, QUAD IV
VTM
ITM=17A, tp=380μs
dv/dt
VD=²/₃ VDRM, RGK=∞, TC=125°C
10
CQDD-12M CQDD-12N UNITS
600
800
V
12
A
80
A
27
A²s
40
W
1.0
W
4.0
A
16
V
10
A/μs
-40 to +125
°C
-40 to +150
°C
60
°C/W
2.7
°C/W
TYP
MAX
UNITS
10
μA
500
μA
9.9
20
mA
24.3
50
mA
14.1
25
mA
1.10
1.50
V
2.10
2.50
V
1.33
1.50
V
V/μs
R2 (12-February 2010)