CQD-4M_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS

CQD-4M
CQD-4N
SURFACE MOUNT
4 AMP SILICON TRIAC
600 THRU 800 VOLTS
DPAK THYRISTOR CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQD-4M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak One Cycle Surge, t=10ms
I²t Value for Fusing, t=10ms
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Operating Junction Temperature
Storage Temperature
SYMBOL
VDRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IGM
TJ
Tstg
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
Rated VDRM, RGK=1KΩ
IDRM
Rated VDRM, RGK=1KΩ, TC=125°C
IGT
VD=12V, QUAD I, II, III
IGT
VD=12V, QUAD IV
IH
RGK=1KΩ
VGT
VD=12V, QUAD I, II, III, IV
VTM
ITM=6.0A, tp=380μs
dv/dt
VD=²/₃ VDRM, TC=125°C
11
CQD-4M CQD-4N
600
800
4.0
40
2.4
3.0
0.2
1.2
-40 to +125
-40 to +150
UNITS
V
A
A
A²s
W
W
A
°C
°C
TYP
MAX
UNITS
10
μA
200
μA
2.5
5.0
mA
5.4
9.0
mA
1.6
5.0
mA
0.95
1.75
V
1.25
1.75
V
V/μs
R1 (12-February 2010)