CQD-4M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 4.0 AMP TRIAC 600 THRU 800 VOLTS

CQD-4M
CQD-4N
SURFACE MOUNT SILICON
TRIACS
4.0 AMP, 600 THRU 800 VOLT
DPAK CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQD-4M and
CQD-4N are epoxy molded silicon TRIACs designed
for full wave AC control applications featuring gate
triggering in all four quadrants.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
VDRM
RMS On-State Current (TC=80°C)
IT(RMS)
Peak One Cycle Surge, t=10ms
ITSM
I²t Value for Fusing, t=10ms
I²t
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Operating Junction Temperature
Storage Temperature
PGM
PG _(AV)
IGM
TJ
Tstg
CQD-4M
600
CQD-4N
800
4.0
40
2.4
3.0
0.2
1.2
-40 to +125
-40 to +150
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IDRM
Rated VDRM, RGK=1KΩ
IDRM
Rated VDRM, RGK=1KΩ, TC=125°C
IGT
VD=12V, QUAD I, II, III
2.5
IGT
VD=12V, QUAD IV
5.4
IH
RGK=1KΩ
1.6
VGT
VD=12V, QUAD I, II, III, IV
0.95
VTM
ITM=6.0A, tp=380μs
1.25
dv/dt
VD=²/₃ VDRM, TC=125°C
11
MAX
10
200
5.0
9.0
5.0
1.75
1.75
UNITS
V
A
A
A²s
W
W
A
°C
°C
UNITS
μA
μA
mA
mA
mA
V
V
V/μs
R2 (21-January 2013)