CQ92-2M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – TRIAC 2.0 AMP, 600 THRU 800 VOLTS

CQ92-2M
CQ92-2N*
TRIAC
2.0 AMP, 600 THRU 800 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ92-2M
and CQ92-2N are epoxy molded silicon Triacs
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=50°C)
Peak One Cycle Surge (t=10ms)
I²t Value for Fusing (t=10ms)
VDRM
IT(RMS)
ITSM
I²t
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
PGM
PG _(AV)
IGM
VGM
Tstg
TJ
Θ_JA
Θ_JC
CQ92-2M
CQ92-2N*
600
800
2.0
20
2.0
3.0
0.2
1.2
8.0
-40 to +150
-40 to +125
180
90
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
Rated VDRM, RGK=1KΩ
IDRM
Rated VDRM, RGK=1KΩ, TC=125°C
IGT
VD=12V, QUAD I, II, III
IGT
VD=12V, QUAD IV
IH
IT=100mA, RGK=1KΩ
VGT
VD=12V, QUAD I, II, III, IV
VTM
ITM=2.0A, tp=380µs
VTM
ITM=3.0A, tp=380µs
dv/dt
VD=²/₃ VDRM, TC=125°C
2.5
* Available on request. Please consult factory.
TYP MAX
5.0
200
1.4 5.0
3.8 8.0
1.2 5.0
1.1 1.8
1.50 1.75
1.7 2.0
UNITS
V
A
A
A²s
W
W
A
V
°C
°C
°C/W
°C/W
UNITS
µA
µA
mA
mA
mA
V
V
V
V/µs
R0 (22-April 2004)