CQ89DS Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 2.0 AMP TRIAC 400 THRU 800 VOLTS

NEW
CQ89DS
CQ89MS
CQ89NS
Central^TM
Semiconductor Corp.
2.0 AMP TRIAC
400 THRU 800 VOLTS
DESCRIPTION:
SOT-89
SOT-89 CASE
MAXIMUM RATINGS (TC=25^oC)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80^oC)
Peak One Cycle Surge (10ms)
Peak Gate Current
Average Gate Power Dissipation
StorageTemperature
Junction Temperature
Thermal Resistance
VDRM
IT(RMS)
ITSM
IGM
PG(AV)
Tstg
TJ
Θ_J-C
The CENTRAL SEMICONDUCTOR
CQ89DS series types are epoxy molded
silicon triacs designed for full wave AC
control applications featuring gate
triggering in all four (4) quadrants.
CQ89DS
400
CQ89MS CQ89NS
600
800
2.0
10
1.0
0.1
-45 to +150
-45 to +125
10
UNITS
V
A
A
A
W
o_C
o_C
o_C/W
ELECTRICAL CHARACTERISTICS (TC=25^oC unless otherwise noted)
SYMBOL
IDRM
IDRM
IGT
IH
VGT
VTM
dv/dt
TEST CONDITIONS
VD=Rated VDRM
VD=Rated VDRM, TC=125^oC
VD=12V, QUAD I, II, III, IV
VD=12V
VD=12V
IT=3.0A
VD=2 ₃ VDRM, TC=125^oC
MIN TYP MAX
5.0
200
5.0
5.0
2.0
1.75
30
UNITS
µA
µA
mA
mA
V
V
V/µs
254