CQ39BS Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – TRIAC 4.0 AMP, 200 THRU 800 VOLTS

CQ39BS
CQ39DS
CQ39MS
CQ39NS
TRIAC
4.0 AMP, 200 THRU 800 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ39BS
series type is a hermetically sealed silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak One Cycle Surge (t=10ms)
I²t Value for Fusing (t=10ms)
VDRM
IT(RMS)
ITSM
I²t
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
PGM
PG _(AV)
IGM
Tstg
TJ
Θ_JA
Θ_JC
CQ39BS CQ39DS CQ39MS CQ39NS
200
400
600
800
4.0
35
2.0
3.0
0.2
1.2
-40 to +150
-40 to +125
160
9.0
UNITS
V
A
A
A²s
W
W
A
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
Rated VDRM, RGK=1KΩ
IDRM
Rated VDRM, RGK=1KΩ, TC=125°C
IGT
VD=12V, QUAD I, II, III
IGT
VD=12V, QUAD IV
IH
RGK=1KΩ
VGT
VD=12V, QUAD I, II, III, IV
VTM
ITM=6.0A, tp=380µs
dv/dt
VD=²/₃ VDRM, TC=125°C
11
TYP
2.5
5.5
1.6
MAX
10
200
5.0
9.0
5.0
2.0
1.75
UNITS
µA
µA
mA
mA
mA
V
V
V/µs
R1 (18-August 2004)