CQ223M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 1.0 AMP TRIAC 600 THRU 800 VOLTS

PRELIMINAR^{CCYQQ222233MN}
1.0 AMP TRIAC
600 THRU 800 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ223M
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TC=25°C)
PRELIMINARY ^{Peak Repetitive Off-State Voltage}
RMS On-State Current (TC=80°C)
Peak One Cycle Surge (tp=10 ms)
Peak Gate Current
Average Gate Power Dissipation
Storage Temperature
Junction Temperature
Thermal Reistance
SYMBOL
VDRM
IT _(RMS)
ITSM
IGM
PG _(AV)
Tstg
TJ
Θ_JC
CQ223M
600
1.0
10
1.0
0.1
-40 to +150
-40 to +125
10
CQ223N
800
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IDRM
VD=Rated VDRM
MAX
10
IDRM
VD=Rated VDRM, TC=125°C
200
IGT
VD=12V, QUAD I, II, III, IV
10
IH
VD=12V
10
VGT
VD=12V, RL=10Ω, QUAD I, II, III
2.0
VGT
VD=12V, RL=10Ω, QUAD IV
2.5
VTM
IT=1.0A
2.0
dv/dt
VD=2/3 VDRM, TC=125°C
5.0
UNITS
V
A
A
A
W
°C
°C
°C/W
UNITS
µA
µA
mA
mA
V
V
V
V/µs
R0 (10-June 2004)