CQ223-2M_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS

CQ223-2M
CQ223-2N
SURFACE MOUNT
2 AMP SILICON TRIAC
600 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ223-2M series
type is an Epoxy Molded Silicon Triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak One Cycle Surge, t=10ms
I²t Value for Fusing, t=10ms
SYMBOL
VDRM
IT(RMS)
ITSM
I²t
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Operating Junction Temperature
Storage Temperature
Thermal Resistance
PGM
PG _(AV)
IGM
TJ
Tstg
Θ_JA
CQ223-2M CQ223-2N
600
800
2.0
10
0.5
3.0
0.2
1.2
-40 to +125
-40 to +150
62.5
UNITS
V
A
A
A²s
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
IDRM
IGT
IGT
IH
VGT
VTM
VTM
dv/dt
Rated VDRM, RGK=1KΩ
Rated VDRM, RGK=1KΩ, TC=125°C
VD=12V, QUAD I, II, III
VD=12V, QUAD IV
RGK=1KΩ
VD=12V, QUAD I, II, III, IV
ITM=2.0A, tp=380μs
ITM=3.0A, tp=380μs
VD=²/₃ VDRM, TC=125°C
5.0
μA
200
μA
1.35
5.00
mA
3.75
8.00
mA
1.2
5.0
mA
1.1
1.8
V
1.50
1.75
V
1.7
2.0
V
2.5
V/μs
R1 (24-June 2010)