CQ220-8MFP Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 8.0 AMP TRIAC 600 THRU 800 VOLTS

CQ220-8MFP
CQ220-8NFP
Central^TM
Semiconductor Corp.
8.0 AMP TRIAC
600 THRU 800 VOLTS
FULL
PAK
TO-220FP CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ220-8MFP
series type is an Epoxy Molded Silicon Triac designed
for full wave AC control applications featuring gate
triggering in all four (4) quadrants.
FULL PAK:
• Fully insulated plastic case.
• Suitable for automatic insertion.
• No mica insulator required.
• Does not require non-conductive nylon hardware.
• Can be easily mounted with metal screw or rivet.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CQ220 CQ220
-8MFP -8NFP
UNITS
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I²t Value for Fusing (t=8.3ms)
VDRM
IT(RMS)
ITSM
I²t
600
800
V
8.0
A
50
A
10
A²s
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
PGM
PG _(AV)
IGM
VGM
40
W
1.0
W
4.0
A
16
V
Repetitive (f=60Hz)
di/dt
10
A/µs
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
Tstg
TJ
Θ_JA
Θ_JC
-40 to +150
-40 to +125
60
3.2
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=11A, tp=380µs
VD=²/₃ VDRM, RGK=∞, TC=125°C
4.5
17
4.7
0.95
1.35
1.30
5.0
MAX
10
500
20
50
25
1.50
2.50
1.75
UNITS
µA
µA
mA
mA
mA
V
V
V
V/µs
R1 (14-September 2004)