CQ220-16MFP Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 16 AMP TRIAC 600 THRU 800 VOLTS

CQ220-16MFP
CQ220-16NFP
Central^TM
Semiconductor Corp.
16 AMP TRIAC
600 THRU 800 VOLTS
FULL
PAK
TO-220FP CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ220-16MFP
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
FULL PAK:
• Fully insulated plastic case.
• Suitable for automatic insertion.
• No mica insulator required.
• Does not require non-conductive nylon hardware.
• Can be easily mounted with metal screw or rivet.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I²t Value for Fusing (t=8.3ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IGM
VGM
di/dt
Tstg
TJ
Θ_JA
Θ_JC
CQ220 CQ220
-16MFP -16NFP
600
800
16
110
50
40
1.0
6.0
16
10
-40 to +150
-40 to +125
60
2.3
UNITS
V
A
A
A²s
W
W
A
V
A/µs
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
Rated VDRM
IDRM
Rated VDRM, TC=125°C
IGT
VD=12V, RL=10Ω, QUAD I, II, III
IGT
VD=12V, RL=10Ω, QUAD IV
IH
IT=100mA
VGT
VD=12V, RL=10Ω, QUAD I, II, III
VGT
VD=12V, RL=10Ω, QUAD IV
VTM
ITM=22.5A, tp=380µs
dv/dt
VD=²/₃ VDRM, RGK=∞, TC=125°C
10
TYP
MAX
UNITS
10
µA
2.0
mA
10.9
25
mA
55.2
75
mA
9.8
25
mA
0.97
1.50
V
1.51
2.50
V
1.35
1.60
V
V/µs
R1 (14-September 2004)