CQ220-16 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 16 AMP TRIAC 200 THRU 800 VOLTS

CQ220-16B
CQ220-16D
CQ220-16M
CQ220-16N
16 AMP TRIAC
200 THRU 800 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ220-16B
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I²t Value for Fusing (t=8.3ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IGM
VGM
di/dt
Tstg
TJ
Θ_JA
Θ_JC
CQ220
-16B
200
CQ220 CQ220 CQ220
-16D -16M -16N
400
600 800
16
110
50
40
1.0
6.0
16
10
-40 to +150
-40 to +125
60
2.3
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=22.5A, tp=380µs
VD=²/₃ VDRM, RGK=∞, TC=125°C
10.9
55.2
9.8
0.97
1.51
1.35
10
MAX
10
2.0
25
75
25
1.50
2.50
1.60
UNITS
V
A
A
A²s
W
W
A
V
A/µs
°C
°C
°C/W
°C/W
UNITS
µA
mA
mA
mA
mA
V
V
V
V/µs
R2 (24-September 2004)