CQ220-12MFP Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 12 AMP TRIAC 600 THRU 800 VOLTS

CQ220-12MFP
CQ220-12NFP
Central^TM
Semiconductor Corp.
12 AMP TRIAC
600 THRU 800 VOLTS
FULL
PAK
TO-220FP CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ220-12MFP
series type is an Epoxy Molded Silicon Triac designed
for full wave AC control applications featuring gate
triggering in all four (4) quadrants.
FULL PAK:
• Fully insulated plastic case.
• Suitable for automatic insertion.
• No mica insulator required.
• Does not require non-conductive nylon hardware.
• Can be easily mounted with metal screw or rivet.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CQ220 CQ220
-12MFP -12NFP
UNITS
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I²t Value for Fusing (t=8.3ms)
VDRM
IT(RMS)
ITSM
I²t
600
800
V
12
A
80
A
27
A²s
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
PGM
PG _(AV)
IGM
VGM
40
W
1.0
W
4.0
A
16
V
Repetitive (f=60Hz)
di/dt
10
A/µs
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
Tstg
TJ
Θ_JA
Θ_JC
-40 to +150
-40 to +125
60
2.7
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
Rated VDRM
IDRM
Rated VDRM, TC=125°C
IGT
VD=12V, RL=10Ω, QUAD I, II, III
IGT
VD=12V, RL=10Ω, QUAD IV
IH
IT=100mA
VGT
VD=12V, RL=10Ω, QUAD I, II, III
VGT
VD=12V, RL=10Ω, QUAD IV
VTM
ITM=17A, tp=380µs
dv/dt
VD=²/₃ VDRM, RGK=∞, TC=125°C
10
TYP
MAX
UNITS
10
µA
500
µA
9.9
20
mA
24.3
50
mA
14.1
25
mA
1.10
1.50
V
2.10
2.50
V
1.33
1.50
V
V/µs
R1 (14-September 2004)