CQ220-12M3 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – High commutation capability

CQ220-12M3
SILICON
THREE-QUADRANT TRIAC
12 AMP, 600 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ220-12M3 is
an epoxy molded silicon TRIAC designed for full wave
AC control applications featuring gate triggering in three
quadrants.
MARKING: FULL PART NUMBER
TO-220 CASE
FEATURES:
• 3Q technology for noise immunity
• High commutation capability
• Triggering in three quadrants only
APPLICATIONS:
• Motor controls
• General purpose AC switching
• High power inductive load switching
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM
Peak One Cycle Surge Voltage, t=10ms (TJ=125°C)
VDSM
RMS On-State Current (TC=90°C)
IT(RMS)
Peak One Cycle Surge Current, t=16.7ms
ITSM
I²t Value for Fusing, t=10ms
I²t
Average Gate Power Dissipation (TJ=125°C)
Peak Gate Current, tp=20μs (TJ=125°C)
Critical Rate of Rise of On-State Current
Repetitive, f=120Hz (TJ=125°C)
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
PG(AV)
IGM
di/dt
TJ
Tstg
Θ_JA
Θ_JC
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IDRM, IRRM VDRM, VRRM=600V
IGT
VD=12V, RL=30Ω, QUAD I, II, III
IH
IT=500mA
VGT
VD=12V, RL=30Ω, QUAD I, II, III
VTM
ITM=17A, tp=380μs
1.39
dv/dt
∞ VD=⅔VDRM, RGK= , TJ=125°C
600
700
12
100
78
1.0
4.0
50
-40 to +125
-40 to +150
60
1.4
MAX
5.0
50
50
1.3
1.55
500
UNITS
V
V
A
A
A²s
W
A
A/μs
°C
°C
°C/W
°C/W
UNITS
μA
mA
mA
V
V
V/μs
R1 (7-October 2015)