CQ202-4M-2 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 4.0 AMP TRIAC 600 THRU 800 VOLTS

CQ202-4M-2
CQ202-4N-2
4.0 AMP TRIAC
600 THRU 800 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ202-4M-2
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
TO-202-2 THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak One Cycle Surge (t=10ms)
I²t Value for Fusing (t=10ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I²t
PGM
PG _(AV)
IGM
Tstg
TJ
Θ_JA
Θ_JC
CQ202
-4M-2
CQ202
-4N-2
600
800
4.0
40
2.4
3.0
0.2
1.2
-40 to +150
-40 to +125
60
7.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM, RGK=1KΩ
Rated VDRM, RGK=1KΩ, TC=125°C
VD=12V, QUAD I, II, III
VD=12V, QUAD IV
RGK=1KΩ
VD=12V, QUAD I, II, III
VD=12V, QUAD IV
ITM=6.0A, tp=380µs
VD=²/₃ VDRM, TC=125°C
6.6
35
5.2
1.1
2.0
1.25
5.0
MAX
10
200
20
50
25
1.5
2.5
1.60
UNITS
V
A
A
A²s
W
W
A
°C
°C
°C/W
°C/W
UNITS
µA
µA
mA
mA
mA
V
V
V
V/µs
R0 (7-May 2004)