CQ202-4B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 4.0 AMP TRIAC 200 THRU 800 VOLTS

CQ202-4B
CQ202-4D
CQ202-4M
CQ202-4N
4.0 AMP TRIAC
200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ202-4B series
type is an epoxy molded silicon triac designed for full
wave AC control applications featuring gate triggering
in all four (4) quadrants.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
CQ202
SYMBOL -4B
Peak Repetitive Off-State Voltage
VDRM
200
RMS On-State Current (TC=80°C)
IT(RMS)
Peak Non-Repetitive Surge Current (t=8.3ms) ITSM
Peak Non-Repetitive Surge Current (t=10ms) ITSM
I²t Value for Fusing (t=10ms)
I²t
Peak Gate Power (tp=10μs)
Average Gate Power Dissipation
Peak Gate Current (tp=10μs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
PGM
PG(AV)
IGM
Tstg
TJ
Θ_JA
Θ_JC
CQ202
-4D
400
CQ202
-4M
600
4.0
40
35
6.0
3.0
0.2
1.2
-40 to +150
-40 to +125
60
7.5
CQ202
-4N
800
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IDRM
Rated VDRM, RGK=1.0KΩ
IDRM
Rated VDRM, RGK=1.0KΩ, TC=125°C
IGT
VD=12V, QUAD I, II, III
6.6
IGT
VD=12V, QUAD IV
35
IH
RGK=1.0KΩ
5.2
VGT
VD=12V, QUAD I, II, III
1.1
VGT
VD=12V, QUAD IV
2.0
VTM
ITM=6.0A, tp=380μs
1.25
dv/dt
VD=⅔ VDRM, TC=125°C
5.0
MAX
10
200
20
50
25
1.5
2.5
1.6
UNITS
V
A
A
A
A²s
W
W
A
°C
°C
°C/W
°C/W
UNITS
μA
μA
mA
mA
mA
V
V
V
V/μs
R6 (23-January 2012)