CPS165 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Silicon Controlled Rectifier 35 Amp Sensitive Gate SCR Chip

PROCESS CPS165
Silicon Controlled Rectifier
35 Amp Sensitive Gate SCR Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Cathode Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
Glass Passivated Mesa
165 x 165 MILS
8.7 MILS
131 x 91 MILS
31 x 31 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIER PER 4 INCH WAFER
376
PRINCIPAL DEVICE TYPES
CS220-35M Series
145 Adams Avenue
Hauppauge, NY 11788 USA
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www.centralsemi.com
R0 (4- January 2006)