CPS150 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Silicon Controlled Rectifier 25 Amp Sensitive Gate SCR Chip

PROCESS CPS150
Silicon Controlled Rectifier
25 Amp Sensitive Gate SCR Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Cathode Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
Glass Passivated Mesa
150 x 150 MILS
8.7 MILS
117 x 84 MILS
24 x 24 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIER PER 4 INCH WAFER
466
PRINCIPAL DEVICE TYPES
CS220-25M Series
CSDD-25M Series
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Hauppauge, NY 11788 USA
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www.centralsemi.com
R0 (4- January 2006)