CPS090 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Silicon Controlled Rectifier 8.0 Amp Sensitive Gate SCR Chip

PROCESS CPS090
Silicon Controlled Rectifier
8.0 Amp Sensitive Gate SCR Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Cathode Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
Glass Passivated Mesa
90 x 90 MILS
8.7 MILS
60 x 30 MILS
22 x 22 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIER PER 4 INCH WAFER
1,310
PRINCIPAL DEVICE TYPES
CS220-8M Series
CSD-8M Series
CSDD-8M Series
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (4- January 2006)